Lecturer: Kazuo Nakajima

Time: 15:30 p.m. every Monday from October 14, 2019

Place: Room 104, building 1, State Key Laboratory of silicon materials, Yuquan campus, Zhejiang University

Invited by: Academician Yang Deren

Subject of the report

October 14^th

1. Development of High-Quality Crystals for III-V Quaternary Optical Semiconductors and Solar Cell Silicon and Their Industrial Applications. (This is the presentation for Laudise Prize)

October 21^st

2. Growth of high-quality Si ingots for solar cells on the view point of Basic ingot growth and crystallographic quality of Si crystals for solar cells

October 28^th 

3. Growth of high-quality Si ingots for solar cells on the view point of The dendritic cast method

November 4^th

4. Growth of high-quality Si ingots for solar cells -The conventional cast method, High performance (HP) cast method and Mono-like cast method

November 11^th 

5. Growth of high-quality Si ingots for solar cells -Growth of Si ingots using cast furnaces by the NOC method

November 18^th

6. Growth of high-quality Si ingots for solar cells using the noncontact crucible method -How to establish the low-temperature region in a Si melt--Performance of p-type solar cells