Topic:Towards nanowire-based telecom-band optoelectronic devices
Time: 3:00 - 4:00 pm, December 23, 2019 (Monday)
Lecturer: Zhang Guoqiang
Place: Conference room, 1 / 1 F, building 1, State Key Laboratory of silicon materials
Invited by: Pi Xiaodong
Abstract
One motivation for the very intense research in III-V compound semiconductor nanowire field is that nanowire structures can offer new opportunities to main-stream semiconductors. In this talk, firstly, I will describe a CMOS-compatible synthesis approach, i.e. gold-free indium-particle-catalyzed (or self-catalyzed) vapor-liquid-solid growth mode. The approach enables the growth of InP/InAs heterostructure nanowire and lasingin telecom band at room temperature. We have also realized mid-IR lasing by using InAs nanowires with hexagonal crystalline structure. Controllable formation of p-i-n structure along the axial direction enables light emitting diodes to operate at room temperature with telecom-band electroluminescence. A novel approach will then be described for site control of indium nanoparticle by self-assembly process for InP/InAs nanowire array.
Brief introduction of the Lecturer
Zhang Guoqiang, Ph.D, director and researcher of quantum optical devices research office, NTT Institute of physical properties, Japan. He obtained his bachelor's degree and master's degree from Zhejiang University from 1993 to 2000, and his doctor's degree from the Institute of electronic engineering, national Shizuoka University of Japan from 2004 to 2006. He was a COE researcher in the Institute of electronic engineering, national Shizuoka University of Japan from 2006 to 2008. He was a postdoctoral researcher in the quantum optics laboratory of NTT basic Institute of physical sciences from 2008 to now Laboratory of quantum optical devices. He has long been engaged in the preparation of three or five group semiconductor nanowires and the basic and application research in the field of quantum optical devices. The research results have been published in Science Advances, Nature Materials, Nano Letters, ACS Nano and other academic journals.