Title: Beam induced chemical changes in solid phase
Speaker: Dr. Attila Sulyok
Time: 13th Nov., 2019, 14:00
Place: 318 meeting room, Teaching 11
Inviter: Reacher He Tian
Abstract: Solid phase chemical reaction is not unusual, however, not general in material technology. Energetic ion or electron beam can be applied to induce chemical processes at interface of different materials. Beam assisted chemical reactions at or around interfaces of layers have the advantages: horizontal localization (limited only by beam spread) and patterning by beam manipulation, vertical (depth) control down to nm scale by choosing proper species and energy, low temperature is sufficient because the energetic beam provides activation energy to the chemical processes. A few material systems have been investigated applying Auger electron spectroscopy depth profiling for experimental observation of the new chemical phase produced by irradiation and TRIM code for interpretation. Examples will be presented for: formation of thermodynamically unstable Ni3C phase in Ni/C material system by ion beam modification, room temperature SiC formation in S/C layer system by ion beam modification, SiO2 formation on interfaces in less expected conditions by electron beam irradiation.
Biography: Dr. Attila Sulyok (Thin Film Group, Institute for Technical Physics and Materials Science Centre for Energy Research, Hungarian Academy of Sciences). He obtained PhD from Eötvös University, Budapest, Hungary in 1992 and became senior research fellow in 2002. He has published over 80 papers in surface analysis field on Auger electron spectroscopy, AES depth profiling (surface and thin film analysis), elastic peak and energy loss spectroscopy, experimental determination of inelastic mean free path, ion-solid interaction, ion bombardment induced alterations, XPS depth profiling (XPS analysis combined with ion sputtering). He has designed and built 3 instruments for surface analysis.
