报告题目:能带调控的纳米光子学材料与器件
(Band Gap-Engineered Nanophotonics Materials and Devices)
报告时间:2013年1月7日(星期一)上午10点
报告地点:玉泉校区硅材料国家重点实验室1号楼一层的报告厅
报告人:湖南大学物理与微电子科学学院,潘安练 教授
邀请人:皮孝东
报告摘要:
Band gaps are one of the most important parameters of semiconductor materials for optoelectronic applications since they determine the spectral features of absorptions and emission processes. Due to the limited band gaps of natural semiconductors (such as elementary semiconductors or binary compounds), alloying semiconductors of different band gaps has long been one of the standard methods of achieving semiconductors with new band gaps. In this talk, I will report our recent progress on the band gap engineering of semiconductor nanowires. Using some examples, I will show how to realize nanowire band gap tunability through composition control, and how to achieve graded bandgap design based on a single chip and on a single wire, respectively. The engineered nanowire alloys can give continuously tunable gaps (light emissions) covering the entire ultraviolet-visible wavelength range. More importantly, we realized super-broadly wavelength-tunable nanolasers, white lighting and nanowire optical diode using these band gap-engineered nanostructures.
主讲人介绍:
潘教授于2006年毕业于中国科学院物理研究所,随后加盟湖南大学物理与微电子科学学院工作。同年底,赴德国马普微结构物理研究所从事洪堡学者访问研究。2007加入了美国亚利桑那州立大学光子学研究中心,随后取得该校助理研究教授职位。2009年